검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Correlation between etch pits formed by molten KOH+Na2O2 etching and dislocation types in heavily doped n(+)-4H-SiC studied by X-ray topography Yao YZ, Ishikawa Y, Sugawara Y, Sato K, Danno K, Suzuki H, Bessho T, Yamaguchi S, Nishikawa K Journal of Crystal Growth, 364, 7, 2013 |
| 2 |
Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(001) substrates Egawa T, Sakai A, Yamamoto T, Taoka N, Nakatsuka O, Zaima S, Yasuda Y Applied Surface Science, 224(1-4), 104, 2004 |
| 3 |
Contrast factors and character of dislocations in cubic and hexagonal crystals Dragomir LC, Borbely A, Ungar T Materials Science Forum, 443-4, 95, 2004 |
| 4 |
Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography Chen WM, McNally PJ, Shvyd'ko YV, Tuomi T, Danilewsky AN, Lerche M Journal of Crystal Growth, 252(1-3), 113, 2003 |
| 5 |
Generation and propagation of dislocations during crystal growth Klapper H Materials Chemistry and Physics, 66(2-3), 101, 2000 |