검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Protrusions reduction in 3C-SiC thin film on Si Zimbone M, Mauceri M, Litrico G, Barbagiovanni EG, Bongiorno C, La Via F Journal of Crystal Growth, 498, 248, 2018 |
| 2 |
4H-SiC epitaxial growth on SiC substrates with various off-angles Saitoh H, Kimoto T Materials Science Forum, 483, 89, 2005 |
| 3 |
Influence of C/Si ratio on the 4H-SiC (0001) epitaxial growth and a keynote for high-rate growth Ishida Y, Takahashi T, Kojima K, Okumura H, Arai K, Yoshida S Materials Science Forum, 457-460, 213, 2004 |
| 4 |
Dependence of micropipe dissociation on surface orientation Kamata I, Tsuchida H, Izumi S, Tawara T, Izumi K Materials Science Forum, 457-460, 379, 2004 |
| 5 |
The effect of nitrogen on crystal growth of SiC on (11(2)over-bar0) substrates Nishiguchi T, Masuda Y, Ohshima S, Nishino S Materials Science Forum, 389-3, 115, 2002 |
| 6 |
Homoepitaxial growth of 4H-SiC thin film below 1000 degrees C microwave plasma chemical vapor deposition Okamoto M, Kosugi R, Tanaka Y, Takeuchi D, Nakashima S, Nishizawa S, Fukuda K, Okushi H, Arai K Materials Science Forum, 389-3, 299, 2002 |
| 7 |
Influence of silicon gas-to-particle conversion on SiCCVD in a cold-wall rotating-disc reactor Vorob'ev AN, Bogdanov MV, Komissarov AE, Karpov SY, Bord OV, Lovtsus AA, Makarov YN Materials Science Forum, 353-356, 107, 2001 |
| 8 |
Pressure effect in sublimation growth of bulk SiC Kitou Y, Bahng W, Nishizawa S, Nishino S, Arai K Materials Science Forum, 338-3, 83, 2000 |