| 1 |
Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition
Kato M, Tanaka S, Ichimura M, Arai E, Nakamura S, Kimoto T
Materials Science Forum, 483, 381, 2005 |
| 2 |
Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition
Nakamura S, Kimoto T, Matsunami H
Materials Science Forum, 389-3, 183, 2002 |
| 3 |
Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC
Schoner A, Miyamoto N, Kimoto T, Matsunami H
Materials Science Forum, 353-356, 451, 2001 |
| 4 |
Observation of deep levels in SiC by optical-isothermal capacitance transient spectroscopy
Kobayashi S, Imai S, Hayami Y, Kushibe M, Shinohe T, Okushi H
Materials Science Forum, 338-3, 757, 2000 |
| 5 |
The Electrical Characteristics of the Amorphous-Silicon Thin-Film Transistors with Dual Intrinsic Layers
Tsai JW, Cheng HC, Chou A, Su FC, Luo FC, Tuan HC
Journal of the Electrochemical Society, 144(8), 2929, 1997 |
| 6 |
Surface-States Due to Fe Atoms Deposited on a TiO2 Surface-Coated with a Porous SiO2 Film
Kobayashi K, Tamai U, Matsushima S, Okada G
Journal of Physical Chemistry, 100(17), 7106, 1996 |
