화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Fluorine-doped SiO2 and fluorocarbon low-k dielectrics investigated by SIMS
Cwil M, Kalisz M, Konarski P
Applied Surface Science, 255(4), 1334, 2008
2 Etching of silicon nitride in CCl2F2, CHF3, SiF4, and SF6 reactive plasma: A comparative study
Pant BD, Tandon US
Plasma Chemistry and Plasma Processing, 19(4), 545, 1999
3 High density fluorocarbon etching of silicon in an inductively coupled plasma : Mechanism of etching through a thick steady state fluorocarbon layer
Standaert TEFM, Schaepkens M, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM
Journal of Vacuum Science & Technology A, 16(1), 239, 1998
4 Nonequilibrium Glow-Discharge Fluorination of Polymer Surfaces
Hopkins J, Badyal JP
Journal of Physical Chemistry, 99(12), 4261, 1995