화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Dry etching of InP using a CH3Cl/Ar/H-2 gas mixture with electron-cyclotron-resonance excitation
Nozawa H, Shibata T, Tamamura T
Journal of Vacuum Science & Technology B, 16(2), 515, 1998
2 Electrical Evaluation of Process-Damaged Layers Using P-N-Junctions
Yuda M, Kozen A
Journal of Vacuum Science & Technology B, 15(3), 618, 1997
3 Influence of the Gas-Mixture on the Reactive Ion Etching of InP in CH4-H-2 Plasmas
Feurprier Y, Cardinaud C, Turban G
Journal of Vacuum Science & Technology B, 15(5), 1733, 1997
4 Plasma-Etching of III-V Semiconductors in BCl3 Chemistries .2. InP and Related-Compounds
Lee JW, Hong J, Lambers ES, Abernathy CR, Pearton SJ, Hobson WS, Ren F
Plasma Chemistry and Plasma Processing, 17(2), 169, 1997
5 The Worlds Smallest Gas-Cylinders
Gadd GE, Blackford M, Moricca S, Webb N, Evans PJ, Smith AN, Jacobsen G, Leung S, Day A, Hua Q
Science, 277(5328), 933, 1997
6 Photofragment Imaging of Methane
Heck AJ, Zare RN, Chandler DW
Journal of Chemical Physics, 104(11), 4019, 1996
7 High Ion Density Plasma-Etching of InGaP, Alinp, and AlGaP in CH4/H-2/Ar
Lee JW, Pearton SJ, Santana CJ, Mileham JR, Lambers ES, Abernathy CR, Ren F, Hobson WS
Journal of the Electrochemical Society, 143(3), 1093, 1996
8 High-Density Etching of Group-III Nitride Ternary Films
Shul RJ, Howard AJ, Pearton SJ, Abernathy CR, Vartuli CB
Journal of the Electrochemical Society, 143(10), 3285, 1996
9 High Microwave-Power Electron-Cyclotron-Resonance Etching of III-V Semiconductors in CH4/H-2/Ar
Pearton SJ, Lee JW, Lambers ES, Mileham JR, Abernathy CR, Hobson WS, Ren F, Shul RJ
Journal of Vacuum Science & Technology B, 14(1), 118, 1996
10 Treatment of InP Surfaces in Radio-Frequency H-2 and H-2/CH4/Ar Plasmas - In-Situ Compositional Analysis, Etch Rates, and Surface-Roughness
Parmeter JE, Shul RJ, Howard AJ, Miller PA
Journal of Vacuum Science & Technology B, 14(6), 3563, 1996