검색결과 : 16건
No. | Article |
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1 |
Dry etching of InP using a CH3Cl/Ar/H-2 gas mixture with electron-cyclotron-resonance excitation Nozawa H, Shibata T, Tamamura T Journal of Vacuum Science & Technology B, 16(2), 515, 1998 |
2 |
Electrical Evaluation of Process-Damaged Layers Using P-N-Junctions Yuda M, Kozen A Journal of Vacuum Science & Technology B, 15(3), 618, 1997 |
3 |
Influence of the Gas-Mixture on the Reactive Ion Etching of InP in CH4-H-2 Plasmas Feurprier Y, Cardinaud C, Turban G Journal of Vacuum Science & Technology B, 15(5), 1733, 1997 |
4 |
Plasma-Etching of III-V Semiconductors in BCl3 Chemistries .2. InP and Related-Compounds Lee JW, Hong J, Lambers ES, Abernathy CR, Pearton SJ, Hobson WS, Ren F Plasma Chemistry and Plasma Processing, 17(2), 169, 1997 |
5 |
The Worlds Smallest Gas-Cylinders Gadd GE, Blackford M, Moricca S, Webb N, Evans PJ, Smith AN, Jacobsen G, Leung S, Day A, Hua Q Science, 277(5328), 933, 1997 |
6 |
Photofragment Imaging of Methane Heck AJ, Zare RN, Chandler DW Journal of Chemical Physics, 104(11), 4019, 1996 |
7 |
High Ion Density Plasma-Etching of InGaP, Alinp, and AlGaP in CH4/H-2/Ar Lee JW, Pearton SJ, Santana CJ, Mileham JR, Lambers ES, Abernathy CR, Ren F, Hobson WS Journal of the Electrochemical Society, 143(3), 1093, 1996 |
8 |
High-Density Etching of Group-III Nitride Ternary Films Shul RJ, Howard AJ, Pearton SJ, Abernathy CR, Vartuli CB Journal of the Electrochemical Society, 143(10), 3285, 1996 |
9 |
High Microwave-Power Electron-Cyclotron-Resonance Etching of III-V Semiconductors in CH4/H-2/Ar Pearton SJ, Lee JW, Lambers ES, Mileham JR, Abernathy CR, Hobson WS, Ren F, Shul RJ Journal of Vacuum Science & Technology B, 14(1), 118, 1996 |
10 |
Treatment of InP Surfaces in Radio-Frequency H-2 and H-2/CH4/Ar Plasmas - In-Situ Compositional Analysis, Etch Rates, and Surface-Roughness Parmeter JE, Shul RJ, Howard AJ, Miller PA Journal of Vacuum Science & Technology B, 14(6), 3563, 1996 |