| 1 |
Close-spaced vapor transport reactor for III-V growth using HCI as the transport agent
Funch CJ, Greenaway AL, Boucher JW, Weiss R, Welsh A, Aloni S, Boettcher SW
Journal of Crystal Growth, 506, 147, 2019 |
| 2 |
Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition
Liu XF, Yan GG, Liu B, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Sun GS, Zeng YP
Journal of Crystal Growth, 504, 7, 2018 |
| 3 |
Growth of thick and high crystalline quality InGaN layers on GaN (000(1)over-bar) substrate using tri-halide vapor phase epitaxy
Hirasaki T, Eriksson M, Thieu QT, Karlsson F, Murakami H, Kumagai Y, Monemar B, Holtz PO, Koukitu A
Journal of Crystal Growth, 456, 145, 2016 |
| 4 |
Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
Leone S, Henry A, Janzen E, Nishizawa S
Journal of Crystal Growth, 362, 170, 2013 |
| 5 |
Vapor pressure of aqueous choline chloride-based deep eutectic solvents (ethaline, glyceline, maline and reline) at 30-70 degrees C
Wu SH, Caparanga AR, Leron RB, Li MH
Thermochimica Acta, 544, 1, 2012 |
| 6 |
Partial and integral thermodynamic properties in the sodium chloride-water-1-butanol(iso-butanol) ternary systems
Konstantinova NM, Motornova MS, Mamontov MN, Shishin DI, Uspenskaya IA
Fluid Phase Equilibria, 309(1), 20, 2011 |
| 7 |
Enhanced growth and photoluminescence properties of SnxNy (x > y) nanowires grown by halide chemical vapor deposition
Zervos M, Othonos A
Journal of Crystal Growth, 316(1), 25, 2011 |
| 8 |
Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC
Krishnan B, Kotamraju S, Thirumalai RVKG, Koshka Y
Journal of Crystal Growth, 321(1), 8, 2011 |
| 9 |
Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors
Kotamraju S, Krishnan B, Melnychuk G, Koshka Y
Journal of Crystal Growth, 312(5), 645, 2010 |
| 10 |
Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC
Das H, Melnychuk G, Koshka Y
Journal of Crystal Growth, 312(12-13), 1912, 2010 |
