화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 Small NMR biomolecular sensors
Sun N, Liu Y, Qin L, Lee H, Weissleder R, Ham D
Solid-State Electronics, 84, 13, 2013
2 Extended-Defect Aspects of Ge-on-Si Materials and Devices
Simoen E, Eneman G, Wang G, Souriau L, Loo R, Caymax M, Claeys C
Journal of the Electrochemical Society, 157(2), R1, 2010
3 Very High Performance CMOS on Si(551) Using Radical Oxidation Technology and Accumulation-Mode SOI Device Structure
Cheng WT, Teramoto A, Ohmi T
Journal of the Electrochemical Society, 157(3), H389, 2010
4 Strained Silicon Technology: Mobility Enhancement and Improved Short Channel Effect Performance by Stress Memorization Technique on nFET Devices
Lu CC, Huang JJ, Luo WC, Hou TH, Lei TF
Journal of the Electrochemical Society, 157(5), H497, 2010
5 Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures
Clarysse T, Moussa A, Parmentier B, Bogdanowicz J, Vandervorst W, Bender H, Pfeffer M, Schellenberger M, Nielsen PF, Thorsteinsson S, Lin R, Petersen D
Journal of Vacuum Science & Technology B, 28(1), C1C8, 2010
6 Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies
Herrmann T, Flachowsky S, Illgen R, Klix W, Stenzel R, Hontschel J, Feudel T, Horstmann M
Journal of Vacuum Science & Technology B, 28(1), C1G7, 2010
7 Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
Flachowsky S, Illgen R, Herrmann T, Klix W, Stenzel R, Ostermay I, Naumann A, Wei A, Hontschel J, Horstmann M
Journal of Vacuum Science & Technology B, 28(1), C1G12, 2010
8 Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology
Hu CY, Chen JF, Chen SC, Chang SJ, Wang SM
Journal of Vacuum Science & Technology B, 28(2), 391, 2010
9 Analysis of noise in CMOS image sensor based on a unified time-dependent approach
Brouk I, Nemirovsky A, Alameh K, Nemirovsky Y
Solid-State Electronics, 54(1), 28, 2010
10 Enhancement of Stress-Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering
Lu TY, Wang CM, Chao TS
Electrochemical and Solid State Letters, 12(1), H4, 2009