| 1 |
Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism
Sahoo AK, Subramani NK, Nallatamby JC, Sylvain L, Loyez C, Quere R, Medjdoub F
Solid-State Electronics, 115, 12, 2016 |
| 2 |
Tunable low-pass MEMS filter using defected ground structures (DGS)
Guo XL, Xu C, Zhang GA, Zhang ZJ, Yin HH, Wang ZL
Solid-State Electronics, 94, 28, 2014 |
| 3 |
Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si
Sarafis P, Hourdakis E, Nassiopoulou AG, Neve CR, Ben Ali K, Raskin JP
Solid-State Electronics, 87, 27, 2013 |
| 4 |
Microstrip Array Antenna with Liquid Crystals Loaded Phase Shifter
Kamei T, Yokota M, Ozaki R, Moritake H, Onodera N
Molecular Crystals and Liquid Crystals, 542, 167, 2011 |
| 5 |
Comparison of Microwave Measurements and Theoretical Calculations of Dielectric Birefringence for a Liquid Crystal Loaded CPW-FE Phase Shifter
Utsumi Y, Bach NT, Kamei T, Ozaki R, Moritake H
Molecular Crystals and Liquid Crystals, 510, 197, 2009 |
| 6 |
Electrical resistivity due to electron scattering with magnetic domain walls and magnetic properties of Ni-Fe alloy thin films
Yeh YC, Huang CW, Lue JT
Applied Surface Science, 254(11), 3420, 2008 |
| 7 |
V-band directional tandem coupler of monolithic uniplanar structure
Moon SW, Oh JH, An D, Rhee JK, Kim SD
Current Applied Physics, 7(5), 463, 2007 |
| 8 |
Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications
Moussa MS, Pavageau C, Lederer D, Picheta L, Danneville F, Fel N, Russat J, Raskin JP, Vanhoenacker-Janvier D
Solid-State Electronics, 50(11-12), 1822, 2006 |
| 9 |
Q-band high conversion gain active sub-harmonic mixer
Lee BH, Kim SC, Lee MK, Sul WS, Lim BO, Uhm WY, Rhee JK
Current Applied Physics, 4(1), 69, 2004 |
| 10 |
Characterization of 10 mu m thick porous silicon dioxide obtained by complex oxidation process for RF application
Park JY, Lee JH
Materials Chemistry and Physics, 82(1), 134, 2003 |
