검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1(1)over-bar-00) and (0001) GaN Bhattacharyya A, Friel I, Iyer S, Chen TC, Li W, Cabalu J, Fedyunin Y, Ludwig KF, Moustakas TD, Maruska HP, Hill DW, Gallagher JJ, Chou MC, Chai B Journal of Crystal Growth, 251(1-4), 487, 2003 |
| 2 |
High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors Bhattacharyya A, Iyer S, Iliopoulos E, Sampath AV, Cabalu J, Moustakas TD, Friel I Journal of Vacuum Science & Technology B, 20(3), 1229, 2002 |
| 3 |
GaN grown on two-step cleaned C-terminated 6H-SiC by molecular-beam epitaxy Guan ZP, Cai AL, Porter H, Cabalu J, Chen J, Huang S, Giedd RE Journal of Vacuum Science & Technology A, 19(1), 280, 2001 |
| 4 |
Thermal removal of oxide and carbide from 6H-SiC surfaces before molecular beam epitaxial growth of GaN Guan ZP, Cai AL, Porter H, Cabalu J, Huang S, Giedd RE Applied Surface Science, 165(2-3), 203, 2000 |