화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
Deleruyelle D, Putero M, Ouled-Khachroum T, Bocquet M, Coulet MV, Boddaert X, Calmes C, Muller C
Solid-State Electronics, 79, 159, 2013
2 Phase transitions in wetting films at the surface of Ga-Pb alloys
Calmes C, Giuranno D, Chatain D
Journal of Materials Science, 44(22), 5949, 2009
3 Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism
Calmes C, Bouchier D, Clerc C, Zheng YL
Applied Surface Science, 224(1-4), 122, 2004
4 Study of surface roughening of tensily strained Si1-x-yGexCy films grown by ultra high vacuum-chemical vapor deposition
Calmes C, Bouchier D, Debarre D, Le Thanh V, Clerc C
Thin Solid Films, 428(1-2), 150, 2003