검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations Glowacki E, Le Royer C, Morand Y, Pedini JM, Denneulin T, Cooper D, Barnes JP, Nguyen P, Rouchon D, Hartmann JM, Gourhant O, Baylac E, Campidelli Y, Barge D, Bonnin O, Schwarzenbach W Solid-State Electronics, 97, 82, 2014 |
| 2 |
Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology Fenouillet-Beranger C, Perreau P, Boulenc P, Tosti L, Barnola S, Andrieu F, Weber O, Beneyton R, Perrot C, de Buttet C, Abbate F, Campidelli Y, Pinzelli L, Gouraud P, Margain A, Peru S, Bourdelle KK, Nguyen BY, Boedt F, Poiroux T, Faynot O, Skotnicki T, Boeuf F Solid-State Electronics, 74, 32, 2012 |
| 3 |
Faceting and nanostructure effects in Si and SiGe epitaxy Dutartre D, Seiss B, Campidelli Y, Pellissier-Tanon D, Barge D, Pantel R Thin Solid Films, 520(8), 3163, 2012 |
| 4 |
Thin-film devices for low power applications Monfra S, Fenouillet-Beranger C, Bidal G, Boeuf F, Denorme S, Huguenin JL, Samson MP, Loubet N, Hartmann JM, Campidelli Y, Destefanis V, Arvet C, Benotmane K, Clement L, Faynot O, Skotnicki T Solid-State Electronics, 54(2), 90, 2010 |
| 5 |
Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below Fenouillet-Beranger C, Perreau P, Denorme S, Tosti L, Andrieu F, Weber O, Monfray S, Barnola S, Arvet C, Campidelli Y, Haendler S, Beneyton R, Perrot C, de Buttet C, Gros P, Pham-Nguyen L, Leverd F, Gouraud P, Abbate F, Baron F, Torres A, Laviron C, Pinzelli L, Vetier J, Borowiak C, Margain A, Delprat D, Boedt F, Bourdelle K, Nguyen BY, Faynot O, Skotnicki T Solid-State Electronics, 54(9), 849, 2010 |
| 6 |
Low-temperature RPCVD of Si, SiGe alloy, and Si1-yCy films on Si substrates using trisilane (Silcore (R)) Gouye A, Kermarrec O, Halimaoui A, Campidelli Y, Rouchon D, Burdin M, Holliger P, Bensahel D Journal of Crystal Growth, 311(13), 3522, 2009 |
| 7 |
Wet cleaning and surface characterization of Si1-xGex virtual substrates after a CMP step Abbadie A, Hartmann JM, Besson P, Rouchon D, Martinez E, Holliger P, Di Nardo C, Campidelli Y, Billon T Applied Surface Science, 254(21), 6793, 2008 |
| 8 |
Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities Boucaud P, El Kurdi M, David S, Checoury X, Li X, Ngo TP, Sauvage S, Bouchier D, Fishman G, Kermarrec O, Campidelli Y, Bensahel D, Akatsu T, Richtarch C, Ghyselen B Thin Solid Films, 517(1), 121, 2008 |
| 9 |
Interface chemical characterization of novel W/HfO2/GeON/Ge stacks Martinez E, Renault O, Clavelier L, Le Royer C, Hartmann JM, Loup V, Minoret S, Cosnier V, Campidelli Y, Zegenhagen J, Lee TL Journal of Vacuum Science & Technology B, 25(1), 86, 2007 |
| 10 |
Si/SiGe growth by low-energy plasma-enhanced chemical vapor deposition Pin G, Kermarrec O, Chabanne G, Campidelli Y, Chevrier JB, Billon T, Bensahel D Journal of Crystal Growth, 286(1), 11, 2006 |