화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 A ternary-3D analysis of the optical properties of amorphous hydrogenated silicon-rich carbide
Summonte C, Gaspari F, Quaranta S, Rizzoli R, Centurioni E, Canino M, Polliotti AY, Bianconi M, Desalvo A
Materials Chemistry and Physics, 221, 301, 2019
2 Local epitaxy from the silicon substrate in silicon-rich SiC during Si-nanocrystals formation
Canino M, Balboni R, Desalvo A, Centurioni E, Rizzoli R, Bellettato M, Summonte C
Thin Solid Films, 628, 54, 2017
3 Silicon nanocrystals embedded in silicon carbide as a wide-band gap photovoltaic material
Lopez-Vidrier J, Loper P, Schnabel M, Hernandez S, Canino M, Summonte C, Janz S, Garrido B
Solar Energy Materials and Solar Cells, 144, 551, 2016
4 Silicon nanocrystals in carbide matrix
Summonte C, Allegrezza M, Bellettato M, Liscio F, Canino M, Desalvo A, Lopez-Vidrier J, Hernandez S, Lopez-Conesa L, Estrade S, Peiro F, Garrido B, Loper P, Schnabel M, Janz S, Guerra R, Ossicini S
Solar Energy Materials and Solar Cells, 128, 138, 2014
5 Tail absorption in the determination of optical constants of silicon rich carbides
Allegrezza M, Gaspari F, Canino M, Bellettato M, Desalvo A, Summonte C
Thin Solid Films, 556, 105, 2014
6 Tail absorption in the determination of optical constants of silicon rich carbides (vol 556, pg 105, 2014)
Allegrezza M, Gaspari F, Canino M, Bellettato M, Desalvo A, Summonte C
Thin Solid Films, 564, 426, 2014
7 TMAH-textured, a-Si/c-Si, heterojunction solar cells with 10% reflectance
Rosa M, Allegrezza M, Canino M, Summonte C, Desalvo A
Solar Energy Materials and Solar Cells, 95(11), 2987, 2011
8 Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature
Bergamini F, Moscatelli F, Canino M, Poggi A, Nipoti R
Materials Science Forum, 483, 625, 2005
9 n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature
Canino M, Castaldini A, Cavallini A, Moscatelli F, Nipoti R, Poggi A
Materials Science Forum, 483, 649, 2005
10 Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer
Moscatelli F, Scorzoni A, Poggi A, Canino M, Nipoti R
Materials Science Forum, 483, 737, 2005