검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Six States Switching of Redox-Active Molecular Tweezers by Three Orthogonal Stimuli Doistau B, Benda L, Cantin JL, Chamoreau LM, Ruiz E, Marvaud V, Hasenknopf B, Vives G Journal of the American Chemical Society, 139(27), 9213, 2017 |
| 2 |
Ferromagnetism in Ga0.90Mn0.10As1-yPy: From the metallic to the impurity band conduction regime Cubukcu M, von Bardeleben HJ, Cantin JL, Vickridge I, Lemaitre A Thin Solid Films, 519(23), 8212, 2011 |
| 3 |
Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals von Bardeleben HJ, Cantin JL, Ke L, Shishkin Y, Devaty RP, Choyke WJ Materials Science Forum, 483, 273, 2005 |
| 4 |
Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC von Bardeleben HJ, Cantin JL, Vickridge IC, Song YW, Dhar S, Feldman LC, Williams JR, Ke L, Shishkin Y, Devaty RP, Choyke WJ Materials Science Forum, 483, 277, 2005 |
| 5 |
RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates Morilla A, Lopez JG, Battistig G, Cantin JL, Cheang-Wong JC, von Bardeleben HJ, Respaldiza MA Materials Science Forum, 483, 291, 2005 |
| 6 |
Microscopic structure and electrical activity of 4H-SIC/SiO2 interface defects : an EPR study of oxidized porous SiC von Bardeleben HJ, Cantin JL, Shishkin Y, Devaty RP, Choyke WJ Materials Science Forum, 457-460, 1457, 2004 |
| 7 |
EPR studies of interface defects in n-type 6H-SiC/SiO2 using porous SiC von Bardeleben HJ, Cantin JL, Mynbaeva M, Saddow SE Materials Science Forum, 433-4, 495, 2002 |
| 8 |
Phosphorus-related shallow and deep defects in 6H-SiC Baranov PG, Ilyin IV, Mokhov EN, von Bardeleben HJ, Cantin JL Materials Science Forum, 433-4, 503, 2002 |
| 9 |
EPR study of electron irradiation-induced defects in semi-insulating SiC : V von Bardeleben HJ, Cantin JL, Reshanov SA, Rastegaev VP Materials Science Forum, 433-4, 507, 2002 |
| 10 |
Low-frequency vibrational spectroscopy in SiC polytypes Pajot B, Fall CJ, Cantin JL, von Bardeleben HJ, Jones R, Briddon PR, Gendron F Materials Science Forum, 353-356, 349, 2001 |