검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C Materials Science Forum, 483, 901, 2005 |
| 2 |
SiCBJT technology for power switching and RF applications Agarwal A, Ryu SH, Capell C, Richmond J, Palmour J, Bartlow H, Chow P, Scozzie S, Tipton W, Baynes T, Jones K Materials Science Forum, 457-460, 1141, 2004 |
| 3 |
Power amplification in UHF band using SiC RF power BJTs Agarwal A, Capell C, Phan B, Milligan J, Palmour JW, Stambaugh J, Bartlow H, Brewer K Materials Science Forum, 433-4, 785, 2002 |