화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory
Guy J, Molas G, Vianello E, Carabasse C, Blaise P, Bernard M, Souchier E, Francois P, Aussenac F, Delaye V, Clermidy F, De Salvo B
Thin Solid Films, 563, 15, 2014
2 On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories
Longnos F, Vianello E, Cagli C, Molas G, Souchier E, Blaise P, Carabasse C, Rodriguez G, Jousseaume V, De Salvo B, Dahmani F, Verrier P, Bretegnier D, Liebault J
Solid-State Electronics, 84, 155, 2013
3 Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology
Diokh T, Le-Roux E, Jeannot S, Cagli C, Jousseaume V, Nodin JF, Gros-Jean M, Gaumer C, Mellier M, Cluzel J, Carabasse C, Candelier P, De Salvo B
Thin Solid Films, 533, 24, 2013