| 1 |
Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer
Liang F, Zhao DG, Jiang DS, Liu ZS, Zhu JJ, Chen P, Yang J, Liu W, Li X, Liu ST, Xing Y, Zhang LQ, Yang H, Long H, Li M
Journal of Crystal Growth, 467, 1, 2017 |
| 2 |
First-principles study of carbon impurity effects in the pseudo-hexagonal Ta2O5
Kim JY, Magyari-Kope B, Nishi Y, Ahn JH
Current Applied Physics, 16(6), 638, 2016 |
| 3 |
Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Myagkov VG, Zhigalov VS, Matsynin AA, Bykova LE, Mikhlin YL, Bondarenko GN, Patrin GS, Yurkin GY
Thin Solid Films, 552, 86, 2014 |
| 4 |
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition
He XG, Zhao DG, Jiang DS, Liu ZS, Chen P, Le LC, Yang J, Li XJ, Zhang SM, Zhu JJ, Wang H, Yang H
Thin Solid Films, 564, 135, 2014 |
| 5 |
First principles investigation of interaction between impurity atom (Si, Ge, Sn) and carbon atom in diamond-like carbon system
Li XW, Wang AY, Lee KR
Thin Solid Films, 520(19), 6064, 2012 |
| 6 |
Influences of unintentionally doped carbon on magnetic properties in Mn-N co-doped ZnO
Wu KP, Gu SL, Tang K, Zhu SM, Ye JD, Zhang R, Zheng YD
Thin Solid Films, 519(8), 2499, 2011 |
| 7 |
The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition
Liu JG, Gu SL, Zhu SM, Tang K, Liu XD, Chen H, Zheng YD
Journal of Crystal Growth, 312(19), 2710, 2010 |
