화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices
Gomez-Campos FM, Rodriguez-Bolivar S, Jimenez-Tejada JA, Carceller JE
Solid-State Electronics, 49(9), 1454, 2005
2 Double gate silicon on insulator transistors. A Monte Carlo study
Gamiz F, Roldan JB, Godoy A, Carceller JE, Cartujo P
Solid-State Electronics, 48(6), 937, 2004
3 Electron transport in silicon-on-insulator devices
Gamiz F, Roldan JB, Lopez-Villanueva JA, Cartujo-Cassinello P, Carceller JE, Cartujo P, Jimenez-Molinos F
Solid-State Electronics, 45(4), 613, 2001
4 Electric-Field Dependence of the Electron-Capture Cross-Section of Neutral Traps in SiO2
Palma A, Lopezvillanueva JA, Carceller JE
Journal of the Electrochemical Society, 143(8), 2687, 1996