검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Recombination enhanced defect annealing in 4H-SiC Storasta L, Carlsson FHC, Bergman JP, Janzen E Materials Science Forum, 483, 369, 2005 |
| 2 |
Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC Gali A, Deak P, Rauls E, Ordejon P, Carlsson FHC, Ivanov IG, Son NT, Janzen E, Choyke WJ Materials Science Forum, 457-460, 443, 2004 |
| 3 |
Characterisation and defects in silicon carbide Bergman JP, Jakobsson H, Storasta L, Carlsson FHC, Magnusson B, Sridhara S, Pozina G, Lendenmann H, Janzen E Materials Science Forum, 389-3, 9, 2002 |
| 4 |
D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC Carlsson FHC, Sridhara SG, Hallen A, Bergman JP, Janzen E Materials Science Forum, 433-4, 345, 2002 |
| 5 |
As-grown and process-induced intrinsic deep-level luminescence in 4H SiC Magnusson B, Ellison A, Carlsson FHC, Son NT, Janzen E Materials Science Forum, 353-356, 365, 2001 |
| 6 |
Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC Sridhara SG, Carlsson FHC, Bergman JP, Henry A, Janzen E Materials Science Forum, 353-356, 377, 2001 |
| 7 |
Proton irradiation induced defects in 4H-SiC Storasta L, Carlsson FHC, Sridhara SG, Aberg D, Bergman JP, Hallen A, Janzen E Materials Science Forum, 353-356, 431, 2001 |
| 8 |
Doping of silicon carbide by ion implantation Svensson BG, Hallen A, Linnarsson MK, Kuznetsov AY, Janson MS, Aberg D, Osterman J, Persson POA, Hultman L, Storasta L, Carlsson FHC, Bergman JP, Jagadish C, Morvan E Materials Science Forum, 353-356, 549, 2001 |
| 9 |
Neutron irradiation of 4H SiC Carlsson FHC, Storasta L, Magnusson B, Berman JP, Skold K, Janzen E Materials Science Forum, 353-356, 555, 2001 |
| 10 |
Electroluminescence from implanted and epitaxially grown pn-diodes Carlsson FHC, Storasta L, Hemmingsson C, Bergman JP, Janzen E Materials Science Forum, 338-3, 687, 2000 |