화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions
Guniat L, Caroff P, Morral AFI
Chemical Reviews, 119(15), 8958, 2019
2 Antimony Induced {112}A Faceted Triangular GaAs1-xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality
Yuan XM, Caroff P, Wang F, Guo YN, Wang YD, Jackson HE, Smith LM, Tan HH, Jagadish C
Advanced Functional Materials, 25(33), 5300, 2015
3 Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Yuan XM, Caroff P, Wong-Leung J, Fu L, Tan HH, Jagadish C
Advanced Materials, 27(40), 6096, 2015
4 Critical thickness for InAs quantum dot formation on (311)B InP substrates
Caroff P, Bertru N, Lu W, Elias G, Dehaese O, Leoublon A, Le Corre A
Journal of Crystal Growth, 311(9), 2626, 2009
5 Controlled polytypic and twin-plane superlattices in III-V nanowires
Caroff P, Dick KA, Johansson J, Messing ME, Deppert K, Samuelson L
Nature Nanotechnology, 4(1), 50, 2009
6 GaAs/GaSb nanowire heterostructures grown by MOVPE
Jeppsson M, Dick KA, Wagner JB, Caroff P, Deppert K, Samuelson L, Wernersson LE
Journal of Crystal Growth, 310(18), 4115, 2008
7 Characterization of GaSb nanowires grown by MOVPE
Jeppsson M, Dick KA, Nilsson HA, Skold N, Wagner JB, Caroff P, Wernersson LE
Journal of Crystal Growth, 310(23), 5119, 2008
8 Self-assembled InAs quantum dots grown on InP (311)B substrates: Role of buffer layer and amount of InAs deposited
Alghoraibi I, Rohel T, Bertru N, Le Corre A, Letoublon A, Caroff P, Dehaese O, Loualiche S
Journal of Crystal Growth, 293(2), 263, 2006
9 Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(311)B substrates
Caroff P, Bertru N, Platz C, Dehaese O, Le Corre A, Loualiche S
Journal of Crystal Growth, 273(3-4), 357, 2005
10 Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 mu m on InP(311)B substrates
Caroff P, Platz C, Dehaese O, Paranthoen C, Bertru N, Le Corre A, Loualiche S
Journal of Crystal Growth, 278(1-4), 329, 2005