검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Simulations of radical and ion fluxes on a wafer in a Cl-2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments Despiau-Pujo E, Chabert P, Bansropun S, Thenot D, Plouhinec P, Cassette S Journal of Vacuum Science & Technology B, 28(4), 693, 2010 |
| 2 |
Optimization of an inductively coupled plasma etching process of GalnP/GaAs based material for photonic band gap applications Combrie S, Bansropun S, Lecomte M, Parillaud O, Cassette S, Benisty H, Nagle J Journal of Vacuum Science & Technology B, 23(4), 1521, 2005 |
| 3 |
MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances Cordier Y, Semond F, Lorenzini P, Grandjean N, Natali F, Damilano B, Massies J, Hoel V, Minko A, Vellas N, Gaquiere C, DeJaeger JC, Dessertene B, Cassette S, Surrugue M, Adam D, Grattepain JC, Aubry R, Delage SL Journal of Crystal Growth, 251(1-4), 811, 2003 |
| 4 |
Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer di Forte-Poisson MA, Bernard S, Teisseire L, Brylinski C, Cassette S, di Persio J Journal of Crystal Growth, 221, 717, 2000 |
| 5 |
XPS characterization of tungsten-based contact layers on 4H-SiC Kakanakova-Georgieva A, Marinova T, Noblanc O, Arnodo C, Cassette S, Brylinski C Thin Solid Films, 337(1-2), 180, 1999 |
| 6 |
Characterization of ohmic and Schottky contacts on SiC Kakanakova-Georgieva A, Marinova T, Noblanc O, Arnodo C, Cassette S, Brylinski C Thin Solid Films, 343-344, 637, 1999 |