검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Influence of dynamic temperature adjustments during growth on the material properties of CZT radiation devices Crocco J, Bensalah H, Zheng Q, Castaldini A, Fraboni B, Cavalcoli D, Cavallini A, Dieguez E Journal of Crystal Growth, 361, 66, 2012 |
| 2 |
Electronic levels induced by irradiation in 4H-silicon carbide Castaldini A, Cavallini A, Rigutti L, Nava F Materials Science Forum, 483, 359, 2005 |
| 3 |
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature Canino M, Castaldini A, Cavallini A, Moscatelli F, Nipoti R, Poggi A Materials Science Forum, 483, 649, 2005 |
| 4 |
Characterization of electrical contacts on polycrystalline 3C-SiC thin films Castaldini A, Cavallini A, Rossi M, Cocuzza M, Ricciardi C Materials Science Forum, 483, 745, 2005 |
| 5 |
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors Bertuccio G, Binetti S, Caccia S, Casiraghi R, Castaldini A, Cavallini A, Lanzieri C, Le Donne A, Nava F, Pizzini S, Rigutti L, Verzellesi G, Vittone E Materials Science Forum, 483, 1015, 2005 |
| 6 |
Defect influence on the electrical properties of 4H-SiC Schottky diodes Scaltrito L, Celasco E, Porro S, Ferrero S, Giorgis F, Pirri CF, Perrone D, Meotto U, Mandracci P, Richieri G, Merlin L, Cavallini A, Castaldini A, Rossi M Materials Science Forum, 457-460, 1081, 2004 |
| 7 |
Electrical and optical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers Le Donne A, Binetti S, Acciarri M, Castaldini A, Nava F, Cavallini A, Pizzini S Materials Science Forum, 457-460, 1503, 2004 |
| 8 |
Deep levels in silicon carbide Schottky diodes Castaldini A, Cavallini A, Polenta L, Nava F, Canali C, Lanzieri C Applied Surface Science, 187(3-4), 248, 2002 |
| 9 |
Surface modifications in Si after rapid thermal annealing Castaldini A, Cavalcoli D, Cavallini A, Jones D, Palermo V, Susi E Journal of the Electrochemical Society, 149(12), G633, 2002 |
| 10 |
Electron-induced damage effects in 4H-SiC Schottky diodes Castaldini A, Cavallini A, Nava F, Fuochi PG, Vanni P Materials Science Forum, 433-4, 439, 2002 |