검색결과 : 10건
No. | Article |
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1 |
Investigation of LaVO3 based compounds as a photovoltaic absorber Jellite M, Rehspringer JL, Fazio MA, Muller D, Schmerber G, Ferblantier G, Colis S, Dinia A, Sugiyama M, Slaoui A, Cavalcoli D, Fix T Solar Energy, 162, 1, 2018 |
2 |
Multi-characterization study of interface passivation quality of amorphous sub-stoichiometric silicon oxide and silicon oxynitride layers for photovoltaic applications Steffens J, Fazio MA, Cavalcoli D, Terheiden B Solar Energy Materials and Solar Cells, 187, 104, 2018 |
3 |
Annealing effects on SiOxNy thin films: Optical and morphological properties Perani M, Brinkmann N, Fazio MA, Hammud A, Terheiden B, Cavalcoli D Thin Solid Films, 617, 133, 2016 |
4 |
Influence of dynamic temperature adjustments during growth on the material properties of CZT radiation devices Crocco J, Bensalah H, Zheng Q, Castaldini A, Fraboni B, Cavalcoli D, Cavallini A, Dieguez E Journal of Crystal Growth, 361, 66, 2012 |
5 |
Mono- and multicrystalline silicon characterization by noncontacting techniques Cavalcoli D, Cavallini A, Rossi M Journal of the Electrochemical Society, 151(4), G248, 2004 |
6 |
Surface contaminant detection in semiconductors using noncontacting techniques Cavalcoli D, Cavallini A, Rossi M, Binetti S, Izzia F, Pizzini S Journal of the Electrochemical Society, 150(8), G456, 2003 |
7 |
Surface modifications in Si after rapid thermal annealing Castaldini A, Cavalcoli D, Cavallini A, Jones D, Palermo V, Susi E Journal of the Electrochemical Society, 149(12), G633, 2002 |
8 |
Surface analyses of polycrystalline and Cz-Si wafers Castaldini A, Cavalcoli D, Cavallini A, Rossi M Solar Energy Materials and Solar Cells, 72(1-4), 425, 2002 |
9 |
Surface photovoltage analysis of crystalline silicon for photovoltaic applications Castaldini A, Cavalcoli D, Cavallini A, Rossi M Solar Energy Materials and Solar Cells, 72(1-4), 559, 2002 |
10 |
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film Susi E, Castaldini A, Cavalcoli D, Cvallini A Journal of the Electrochemical Society, 148(3), G150, 2001 |