화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Investigation of LaVO3 based compounds as a photovoltaic absorber
Jellite M, Rehspringer JL, Fazio MA, Muller D, Schmerber G, Ferblantier G, Colis S, Dinia A, Sugiyama M, Slaoui A, Cavalcoli D, Fix T
Solar Energy, 162, 1, 2018
2 Multi-characterization study of interface passivation quality of amorphous sub-stoichiometric silicon oxide and silicon oxynitride layers for photovoltaic applications
Steffens J, Fazio MA, Cavalcoli D, Terheiden B
Solar Energy Materials and Solar Cells, 187, 104, 2018
3 Annealing effects on SiOxNy thin films: Optical and morphological properties
Perani M, Brinkmann N, Fazio MA, Hammud A, Terheiden B, Cavalcoli D
Thin Solid Films, 617, 133, 2016
4 Influence of dynamic temperature adjustments during growth on the material properties of CZT radiation devices
Crocco J, Bensalah H, Zheng Q, Castaldini A, Fraboni B, Cavalcoli D, Cavallini A, Dieguez E
Journal of Crystal Growth, 361, 66, 2012
5 Mono- and multicrystalline silicon characterization by noncontacting techniques
Cavalcoli D, Cavallini A, Rossi M
Journal of the Electrochemical Society, 151(4), G248, 2004
6 Surface contaminant detection in semiconductors using noncontacting techniques
Cavalcoli D, Cavallini A, Rossi M, Binetti S, Izzia F, Pizzini S
Journal of the Electrochemical Society, 150(8), G456, 2003
7 Surface modifications in Si after rapid thermal annealing
Castaldini A, Cavalcoli D, Cavallini A, Jones D, Palermo V, Susi E
Journal of the Electrochemical Society, 149(12), G633, 2002
8 Surface analyses of polycrystalline and Cz-Si wafers
Castaldini A, Cavalcoli D, Cavallini A, Rossi M
Solar Energy Materials and Solar Cells, 72(1-4), 425, 2002
9 Surface photovoltage analysis of crystalline silicon for photovoltaic applications
Castaldini A, Cavalcoli D, Cavallini A, Rossi M
Solar Energy Materials and Solar Cells, 72(1-4), 559, 2002
10 Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film
Susi E, Castaldini A, Cavalcoli D, Cvallini A
Journal of the Electrochemical Society, 148(3), G150, 2001