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| No. | Article |
|---|---|
| 1 |
Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes Chung EA, Kim YP, Nam KJ, Lee S, Min JY, Shin YG, Choi S, Jin G, Moon JT, Kim S Solid-State Electronics, 56(1), 219, 2011 |