검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Atomic-layer deposition of crystalline BeO on SiC Lee SM, Jang Y, Jung J, Yum JH, Larsen ES, Bielawski CW, Wang WJ, Ryou JH, Kim HS, Cha HY, Oh J Applied Surface Science, 469, 634, 2019 |
| 2 |
AlGaN/GaN-on-Si monolithic power-switching gate current booster Han SW, Jo MG, Kim H, Cho CH, Cha HY Solid-State Electronics, 134, 30, 2017 |
| 3 |
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors Lee JG, Kim HS, Seo KS, Cho CH, Cha HY Solid-State Electronics, 122, 32, 2016 |
| 4 |
Air-breathing miniature planar stack using the flexible printed circuit board as a current collector Kim SH, Cha HY, Miesse CM, Jang JH, Oh YS, Cha SW International Journal of Hydrogen Energy, 34(1), 459, 2009 |
| 5 |
Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs Cha HY, Choi YC, Eastman LF, Spencer MG, Ardaravicius L, Matulionis A, Kiprijanovic O Materials Science Forum, 483, 861, 2005 |
| 6 |
Fabrication of all-polymer micro-DMFCs using UV-sensitive photoresist Cha HY, Choi HG, Nam JD, Lee Y, Cho SM, Lee ES, Lee JK, Chung CH Electrochimica Acta, 50(2-3), 795, 2004 |
| 7 |
Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors Hwang JH, Schaff WJ, Green BM, Cha HY, Eastman LF Solid-State Electronics, 48(2), 363, 2004 |
| 8 |
Elimination of current instability and improvement of RF power performance usingSi(3)N(4) passivation in SiC lateral epitaxy MESFETs Cha HY, Choi YC, Konstantinov AO, Harris CI, Ericsson P, Eastman LF, Spencer MG Solid-State Electronics, 48(7), 1233, 2004 |
| 9 |
지방족 폴리에스터의 생분해 거동에 관한 연구 손명호, 차혜영, 우제완, 박용성, 황영애, 박상순 Applied Chemistry, 6(2), 535, 2002 |
| 10 |
폴리에스테르의 화학적 구조에 따른 생분해 거동에 관한 연구 우제완, 손명호, 차혜영, 박용성, 장길상, 황영애, 박상순 Clean Technology, 8(4), 223, 2002 |