검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Strained InGaAs/InAlAs quantum wells for complementary III-V transistors Bennett BR, Chick TF, Boos JB, Champlain JG, Podpirka AA Journal of Crystal Growth, 388, 92, 2014 |
| 2 |
A physics-based, small-signal model for graphene field effect transistors Champlain JG Solid-State Electronics, 67(1), 53, 2012 |
| 3 |
High-frequency, 6.2 angstrom pN heterojunction diodes Champlain JG, Magno R, Park D, Newman HS, Boos JB Solid-State Electronics, 67(1), 105, 2012 |
| 4 |
Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits Bennett BR, Ancona MG, Champlain JG, Papanicolaou NA, Boos JB Journal of Crystal Growth, 312(1), 37, 2009 |
| 5 |
InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material Champlain JG, Magno R, Ancona M, Newman HS, Boos JB Solid-State Electronics, 52(11), 1829, 2008 |
| 6 |
Narrow band gap InGaSb, InAlAsSb alloys for electronic devices Magno R, Glaser ER, Tinkham BP, Champlain JG, Boos JB, Ancona MG, Campbell PM Journal of Vacuum Science & Technology B, 24(3), 1622, 2006 |
| 7 |
Low resistance, unannealed, Ohmic contacts to p-type In0.27Ga0.73Sb Champlain JG, Magno R, Boos JB Journal of Vacuum Science & Technology B, 24(5), 2388, 2006 |