화학공학소재연구정보센터
검색결과 : 26건
No. Article
1 Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layer
Tong SW, Zhang CF, Jiang CY, Liu G, Ling QD, Kang ET, Chan DSH, Zhu CX
Chemical Physics Letters, 453(1-3), 73, 2008
2 Effects of volatility of etch by-products on surface roughness during etching of metal gates in Cl-2
Hwang WS, Cho BJ, Chan DSH, Lee SW, Yoo WJ
Journal of the Electrochemical Society, 155(1), H6, 2008
3 WORM-type device with rectifying effect based on a conjugated copolymer of fluorene and europium complex
Tan YP, Song Y, Teo EYH, Ling QD, Lim SL, Lo PGQ, Chan DSH, Kang ET, Zhu CX
Journal of the Electrochemical Society, 155(1), H17, 2008
4 Bilayer memory device based on a conjugated copolymer and a carbon nanotube/polyaniline composite
Li L, Ling QD, Zhu C, Chan DSH, Kang ET, Neoh KG
Journal of the Electrochemical Society, 155(4), H205, 2008
5 Process and material properties of HfLaOx prepared by atomic layer deposition
He W, Chan DSH, Kim SJ, Kim YS, Kim ST, Cho BJ
Journal of the Electrochemical Society, 155(10), G189, 2008
6 Multi-layer high-kappa interpoly dielectric for floating gate flash memory devices
Zhang L, He W, Chan DSH, Cho BJ
Solid-State Electronics, 52(4), 564, 2008
7 Scalability and reliability characteristics of CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications
Kang JF, Yu HY, Ren C, Sa N, Yang H, Li MF, Chan DSH, Liu XY, Han RQ, Kwong DL
Journal of the Electrochemical Society, 154(11), H927, 2007
8 Low energy N-2 ion bombardment for removal of (HfO2)(x)(SiON)(1-x) in dilute HF
Hwang WS, Cho BJ, Chan DSH, Yoo WJ
Journal of Vacuum Science & Technology A, 25(4), 1056, 2007
9 Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C-60
Ling QD, Lim SL, Song Y, Zhu CX, Chan DSH, Kang ET, Neoh KG
Langmuir, 23(1), 312, 2007
10 Polymer memories: Bistable electrical switching and device performance
Ling QD, Liaw DJ, Teo EYH, Zhu CX, Chan DSH, Kang ET, Neoh KG
Polymer, 48(18), 5182, 2007