검색결과 : 43건
| No. | Article |
|---|---|
| 1 |
Chemical bath deposition of CdS channel layer for fabrication of low temperature-processed thin-film-transistors Kwon JH, Ahn JS, Yang H Current Applied Physics, 13(1), 84, 2013 |
| 2 |
New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 89, 139, 2013 |
| 3 |
Phosphorous passivation of the SiO2/4H-SiC interface Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Feldman LC, Rozen J, Williams JR Solid-State Electronics, 68, 103, 2012 |
| 4 |
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices Zhu XG, Ahyi AC, Li MY, Chen ZJ, Rozen J, Feldman LC, Williams JR Solid-State Electronics, 57(1), 76, 2011 |
| 5 |
A study on the electrical properties of ZnO based transparent TFTs Barquinha P, Fortunato E, Goncalves A, Pimentel A, Marques A, Pereira L, Martins R Materials Science Forum, 514-516, 68, 2006 |
| 6 |
High temperature rapid thermal oxidation and nitridation of 4H-SiC in diluted N2O and NO ambient Kosugi R, Fukuda K, Arai K Materials Science Forum, 483, 669, 2005 |
| 7 |
Effects of N2O anneal on channel mobility of 4H-SiC MOSFET and gate oxide reliability Fujihira K, Tarui Y, Ohtsuka KI, Imaizumi M, Takami T Materials Science Forum, 483, 697, 2005 |
| 8 |
Realisation of large area 3C-SiC MOSFETs Schoner A, Bakowski M, Ericsson P, Stromberg H, Nagasawa H, Abe M Materials Science Forum, 483, 801, 2005 |
| 9 |
Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping Hatakeyama T, Watanabe T, Senzaki J, Kato M, Fukuda K, Shinohe T, Arai K Materials Science Forum, 483, 829, 2005 |
| 10 |
Characteristics of 4H-SiC MOS interface annealed in N2O Fujihira K, Tarui Y, Imaizumi M, Ohtsuka K, Takami T, Shiramizu T, Kawase K, Tanimura J, Ozeki T Solid-State Electronics, 49(6), 896, 2005 |