검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Morvan E, Godignon P, Skorupa W, Chantel JP Materials Science Forum, 353-356, 571, 2001 |