화학공학소재연구정보센터
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No. Article
1 Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution
Bidal G, Loubet N, Fenouillet-Beranger C, Denorme S, Perreau P, Fleury D, Clement L, Laviron C, Leverd F, Gouraud P, Barnola S, Beneyton R, Torres A, Duluard C, Chapon JD, Orlando B, Salvetat T, Grosjean M, Deloffre E, Pantel R, Dutartre D, Monfray S, Ghibaudo G, Boeuf F, Skotnicki T
Solid-State Electronics, 53(7), 735, 2009
2 65 nm LP/GP mix low cost platform for multi-media wireless and consumer applications
Tavel B, Duriez B, Gwoziecki R, Basso MT, Julien C, Ortolland C, Laplanche Y, Fox R, Sabouret E, Detcheverry C, Boeuf F, Morin P, Barge D, Bidaud M, Bienacel J, Garnier P, Cooper K, Chapon JD, Trouiller Y, Belledent J, Broekaart M, Gouraud P, Denais M, Huard V, Rochereau K, Difrenza R, Planes N, Marin M, Boret S, Gloria D, Vanbergue S, Abramowitz P, Vishnubhotla L, Reber D, Stolk P, Woo M, Arnaud F
Solid-State Electronics, 50(4), 573, 2006