| 1 |
Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
Lin CY, Chang TC, Liu KJ, Chen LH, Chen CE, Tsai JY, Liu HW, Lu YH, Liao JC, Ciou FM, Lin YS
Thin Solid Films, 644, 41, 2017 |
| 2 |
On the turn-around phenomenon in n-MOS transistors under NBTI conditions
Benabdelmoumene A, Djezzar B, Chenouf A, Tahi H, Zatout B, Kechouane M
Solid-State Electronics, 121, 34, 2016 |
| 3 |
Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density
Chae H, Shin S, Choi J, Seo S
Current Applied Physics, 15(11), 1412, 2015 |
| 4 |
Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method
Nguyen MC, Jeon YS, Tong DT, You SW, Jeong JK, Kim B, Ahn JY, Hwang K, Choi R
Solid-State Electronics, 104, 86, 2015 |
| 5 |
On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
Djezzar B, Tahi H, Benabdelmoumene A, Chenouf A, Goudjil M, Kribes Y
Solid-State Electronics, 106, 54, 2015 |
| 6 |
Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications
An HM, Kim HD, Kim TG
Materials Research Bulletin, 48(12), 5084, 2013 |
| 7 |
Effects of mechanical-bending and process-induced stresses on metal effective work function
Yang XD, Chu M, Huang AP, Thompson S
Solid-State Electronics, 79, 142, 2013 |
| 8 |
Functional nanocrystal-based memories with extraction of nanocrystals properties by charge pumping technique
Diaz R, Grisolia J, Pecassou B, Shalchian M, BenAssayag G
Solid-State Electronics, 82, 11, 2013 |
| 9 |
A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor
Djezzar B, Tahi H, Benabdelmoumene A, Chenouf A
Solid-State Electronics, 82, 46, 2013 |
| 10 |
Charge pumping and DCIV currents in SOI FinFETs
Zhang EX, Fleetwood DM, Francis SA, Zhang CX, El-Mamouni F, Schrimpf RD
Solid-State Electronics, 78, 75, 2012 |
