| 1 |
Multiple resistive switching behaviours of CH3NH3PbI3 perovskite film with different metal electrodes
How GTS, Talik NA, Kar YB, Nakajima H, Tunmee S, Tong GB
Applied Surface Science, 473, 194, 2019 |
| 2 |
Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer
Han P, Lai TC, Wang M, Zhao XR, Cao YQ, Wu D, Li AD
Applied Surface Science, 467, 423, 2019 |
| 3 |
Charge trapping and transfer mechanisms of noble metals and metal oxides deposited Ga2O3 toward typical contaminant degradation
Li MJ, Yu ZB, Hou YP, Liu Q, Qian L, Lian CF, Rao XZ, Yang XT
Chemical Engineering Journal, 370, 1119, 2019 |
| 4 |
Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating
Sun YL, Xie D, Dai RX, Sun MX, Li WW, Ren TL
Current Applied Physics, 18(3), 324, 2018 |
| 5 |
Impact of short-time annealing of methylammonium lead iodide on the performance of perovskite solar cells prepared under a high humidity condition
Jeon MK, Ginting RT, Kang JW
Molecular Crystals and Liquid Crystals, 660(1), 79, 2018 |
| 6 |
Electron extraction mechanism in low hysteresis perovskite solar cells using single crystal TiO2 nanorods
Yu FD, Han GS, Tu YJ, Roh HS, Lee JK
Solar Energy, 167, 251, 2018 |
| 7 |
The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress
Rhee J, Choi S, Kang H, Kim JY, Ko D, Ahn G, Jung H, Choi SJ, Kim DM, Kim DH
Solid-State Electronics, 140, 90, 2018 |
| 8 |
Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices
Jang JT, Ko D, Choi S, Kang H, Kim JY, Yu HR, Ahn G, Jung H, Rhee J, Lee H, Choi SJ, Kim DM, Kim DH
Solid-State Electronics, 140, 115, 2018 |
| 9 |
Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress
Park J, Jang KS, Shin DG, Shin M, Yi JS
Solid-State Electronics, 148, 20, 2018 |
| 10 |
Microstructure and charge trapping in ZrO2- and Si3N4-based superlattice layer systems with Ge nanoparticles
Seidel S, Rebohle L, Prucnal S, Lehninger D, Hubner R, Klemm V, Skorupa W, Heitmann J
Thin Solid Films, 645, 124, 2018 |
