검색결과 : 36건
| No. | Article |
|---|---|
| 1 |
Understanding Al incorporation into 4H-SiC during epitaxy Ferro G, Chaussende D, Tsavdaris N Journal of Crystal Growth, 507, 338, 2019 |
| 2 |
The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS Tengeler S, Kaiser B, Ferro G, Chaussende D, Jaegermann W Applied Surface Science, 427, 480, 2018 |
| 3 |
(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes Tengeler S, Kaiser B, Chaussende D, Jaegermann W Applied Surface Science, 400, 6, 2017 |
| 4 |
Undercooling measurement and nucleation study of silicon droplets on various substrates Tsoutsouva MG, Duffar T, Chaussende D, Kamguem M Journal of Crystal Growth, 451, 103, 2016 |
| 5 |
High temperature solution growth and characterization of Cr2AlC single crystals Ouisse T, Sarigiannidou E, Chaix-Pluchery O, Roussel H, Doisneau B, Chaussende D Journal of Crystal Growth, 384, 88, 2013 |
| 6 |
Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals Seiss M, Ouisse T, Chaussende D Journal of Crystal Growth, 384, 129, 2013 |
| 7 |
Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process Claudel A, Blanquet E, Chaussende D, Boichot R, Doisneau B, Berthome G, Crisci A, Mank H, Moisson C, Pique D, Pons M Journal of Crystal Growth, 335(1), 17, 2011 |
| 8 |
Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system Seki K, Alexander, Kozawa S, Ujihara T, Chaudouet P, Chaussende D, Takeda Y Journal of Crystal Growth, 335(1), 94, 2011 |
| 9 |
Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD Claudel A, Blanquet E, Chaussende D, Boichot R, Martin R, Mank H, Crisci A, Doisneau B, Chaudouet P, Coindeau S, Pique D, Pons M Journal of the Electrochemical Society, 158(3), H328, 2011 |
| 10 |
Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth Mercier F, Dedulle JM, Chaussende D, Pons M Journal of Crystal Growth, 312(2), 155, 2010 |