| 1 |
Low-cost and low-temperature chemical oxide passivation process for large area single crystalline silicon solar cells
Yadav TS, Sharma AK, Kottantharayil A, Basu PK
Solar Energy, 169, 270, 2018 |
| 2 |
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films
Nogay G, Stuckelberger J, Wyss P, Rucavado E, Allebe C, Koida T, Morales-Masis M, Despeisse M, Haug FJ, Loper P, Ballif C
Solar Energy Materials and Solar Cells, 173, 18, 2017 |
| 3 |
Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer
Lai MH, Wu YS
Solid-State Electronics, 64(1), 6, 2011 |
| 4 |
Ellipsometric analysis of mixed metal oxides thin films
Buiu O, Davey W, Lu Y, Mitrovic IZ, Hall S
Thin Solid Films, 517(1), 453, 2008 |
| 5 |
Growth of epitaxial gamma-Al2O3(111) films with smooth surfaces on chemically oxidized Si(111) substrates using an Al-N2O mixed source molecular beam epitaxy
Okada T, Ito M, Sawada K, Ishida M
Journal of Crystal Growth, 290(1), 91, 2006 |
| 6 |
Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics
Ohshima C, Taguchi J, Kashiwagi I, Yamamoto H, Ohmi S, Iwai H
Applied Surface Science, 216(1-4), 302, 2003 |
| 7 |
The growth of CoSi2 through an oxide layer: dependence on Si(100) surface structure
Heo J, Jeon H
Thin Solid Films, 379(1-2), 265, 2000 |
