검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM) Chin FT, Lin YH, Yang WL, Liao CH, Lin LM, Hsiao YP, Chao TS Solid-State Electronics, 103, 190, 2015 |
| No. | Article |
|---|---|
| 1 |
Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM) Chin FT, Lin YH, Yang WL, Liao CH, Lin LM, Hsiao YP, Chao TS Solid-State Electronics, 103, 190, 2015 |