화학공학소재연구정보센터
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No. Article
1 Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs
Bennett NS, Cherkaoui K, Wong CS, O'Connor E, Monaghan S, Hurley P, Chauhan L, McNally PJ
Thin Solid Films, 569, 104, 2014
2 Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
Negara MA, Djara V, O'Regan TP, Cherkaoui K, Burke M, Gomeniuk YY, Schmidt M, O'Connor E, Povey IM, Quinn AJ, Hurley PK
Solid-State Electronics, 88, 37, 2013
3 Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)
Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK
Journal of the Electrochemical Society, 159(6), S17, 2012
4 Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors
Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK
Journal of the Electrochemical Society, 158(5), G103, 2011
5 Gd silicate: A high-k dielectric compatible with high temperature annealing
Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engstrom O, Newcomb SB
Journal of Vacuum Science & Technology B, 27(1), 249, 2009
6 Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors
Lu Y, Hall S, Tan LZ, Mitrovic IZ, Davey WM, Raeissi B, Engstrom O, Cherkaoui K, Monaghan S, Hurley PK, Gottlob HDB, Lemme MC
Journal of Vacuum Science & Technology B, 27(1), 352, 2009
7 Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan S, Hurley PK, Cherkaoui K, Negara MA, Schenk A
Solid-State Electronics, 53(4), 438, 2009
8 Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon
Hurley PK, Cherkaoui K, O'Connor E, Lemme MC, Gottlob HDB, Schmidt M, Hall S, Lu Y, Buiu O, Raeissi B, Piscator J, Engstrom O, Newcomb SB
Journal of the Electrochemical Society, 155(2), G13, 2008
9 High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Raeissi B, Piscator J, Engstrom O, Hall S, Buiu O, Lemme MC, Gottlob HDB, Hurley PK, Cherkaoui K, Osten HJ
Solid-State Electronics, 52(9), 1274, 2008
10 Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
Engstrom O, Raeissi B, Hall S, Buiu O, Lemme MC, Gottlob HDB, Hurley PK, Cherkaoui K
Solid-State Electronics, 51(4), 622, 2007