검색결과 : 10건
No. | Article |
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1 |
Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs Bennett NS, Cherkaoui K, Wong CS, O'Connor E, Monaghan S, Hurley P, Chauhan L, McNally PJ Thin Solid Films, 569, 104, 2014 |
2 |
Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs Negara MA, Djara V, O'Regan TP, Cherkaoui K, Burke M, Gomeniuk YY, Schmidt M, O'Connor E, Povey IM, Quinn AJ, Hurley PK Solid-State Electronics, 88, 37, 2013 |
3 |
Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011) Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK Journal of the Electrochemical Society, 159(6), S17, 2012 |
4 |
Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK Journal of the Electrochemical Society, 158(5), G103, 2011 |
5 |
Gd silicate: A high-k dielectric compatible with high temperature annealing Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engstrom O, Newcomb SB Journal of Vacuum Science & Technology B, 27(1), 249, 2009 |
6 |
Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors Lu Y, Hall S, Tan LZ, Mitrovic IZ, Davey WM, Raeissi B, Engstrom O, Cherkaoui K, Monaghan S, Hurley PK, Gottlob HDB, Lemme MC Journal of Vacuum Science & Technology B, 27(1), 352, 2009 |
7 |
Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures Monaghan S, Hurley PK, Cherkaoui K, Negara MA, Schenk A Solid-State Electronics, 53(4), 438, 2009 |
8 |
Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon Hurley PK, Cherkaoui K, O'Connor E, Lemme MC, Gottlob HDB, Schmidt M, Hall S, Lu Y, Buiu O, Raeissi B, Piscator J, Engstrom O, Newcomb SB Journal of the Electrochemical Society, 155(2), G13, 2008 |
9 |
High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy Raeissi B, Piscator J, Engstrom O, Hall S, Buiu O, Lemme MC, Gottlob HDB, Hurley PK, Cherkaoui K, Osten HJ Solid-State Electronics, 52(9), 1274, 2008 |
10 |
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends Engstrom O, Raeissi B, Hall S, Buiu O, Lemme MC, Gottlob HDB, Hurley PK, Cherkaoui K Solid-State Electronics, 51(4), 622, 2007 |