검색결과 : 25건
| No. | Article |
|---|---|
| 1 |
Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam Uedono A, Tsukada Y, Mikawa Y, Mochizuki T, Fujisawa H, Ikeda H, Kurihara K, Fujito K, Terada S, Ishibashi S, Chichibu SF Journal of Crystal Growth, 448, 117, 2016 |
| 2 |
Ammonothermal growth of GaN on a self-nucleated GaN seed crystal Bao QX, Saito M, Hazu K, Kagamitani Y, Kurimoto K, Tomida D, Qiao K, Ishiguro T, Yokoyama C, Chichibu SF Journal of Crystal Growth, 404, 168, 2014 |
| 3 |
Preparation of CuInS2 thin films by sulfurization using ditertiarybutylsulfide Liu XH, Liu ZX, Meng FY, Chichibu SF, Sugiyama M Thin Solid Films, 558, 400, 2014 |
| 4 |
Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis Tomida D, Chichibu SF, Kagamitani Y, Bao Q, Hazu K, Simura R, Sugiyama K, Yokoyama C, Ishiguro T, Fukuda T Journal of Crystal Growth, 348(1), 80, 2012 |
| 5 |
Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer Tomida D, Kagamitani Y, Bao Q, Hazu K, Sawayama H, Chichibu SF, Yokoyama C, Fukuda T, Ishiguro T Journal of Crystal Growth, 353(1), 59, 2012 |
| 6 |
Optical and electrical properties of electron-irradiated Cu(In,Ga)Se-2 solar cells Hirose Y, Warasawa M, Takakura K, Kimura S, Chichibu SF, Ohyama H, Sugiyama M Thin Solid Films, 519(21), 7321, 2011 |
| 7 |
Ammonothermal epitaxy of wurtzite GaN using an NH4I mineralizer Kagamitani Y, Kuribayashi T, Hazu K, Onuma T, Tomida D, Simura R, Chichibu SF, Sugiyama K, Yokoyama C, Ishiguro T, Fukuda T Journal of Crystal Growth, 312(22), 3384, 2010 |
| 8 |
Growth of single-phase Cu(In,Al)Se-2 photoabsorbing films by selenization using diethylselenide Sugiyama M, Umezawa A, Yasuniwa T, Miyama A, Nakanishi H, Chichibu SF Thin Solid Films, 517(7), 2175, 2009 |
| 9 |
Formation of Zn-doped CuInSe2 films by thermal annealing using dimethylzinc Sugiyama M, Kinoshita A, Miyama A, Nakanishi H, Chichibu SF Journal of Crystal Growth, 310(4), 794, 2008 |
| 10 |
Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates Onuma T, Nozaka T, Yamaguchi H, Suzuki T, Chichibu SF Journal of Crystal Growth, 298, 193, 2007 |