검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Elongation of gold nanoparticles by swift heavy ion irradiation: Surface plasmon resonance shift dependence on the electronic stopping power Kerboua CH, Lamarre JM, Chicoine M, Martinu L, Roorda S Thin Solid Films, 527, 186, 2013 |
| 2 |
Thermal evolution of defects produced by implantation of H, D and He in Silicon Simpson PJ, Knights AP, Chicoine M, Dudeck K, Moutanabbir O, Ruffell S, Schiettekatte F, Terreault B Applied Surface Science, 255(1), 63, 2008 |
| 3 |
Deep etch-induced damage during ion-assisted chemical etching of sputtered indium-zinc-oxide films in Ar/CH4/H-2 plasmas Stafford L, Lim WT, Pearton SJ, Song JI, Park JS, Heo YW, Lee JH, Kim JJ, Chicoine M, Schiettekatte F Thin Solid Films, 516(10), 2869, 2008 |
| 4 |
Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers Stafford L, Lim WT, Pearton SJ, Chicoine M, Gujrathi S, Schiettekatte F, Kravchenko II Journal of Vacuum Science & Technology A, 25(4), 659, 2007 |
| 5 |
Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources Salem B, Morris D, Salissou Y, Aimez V, Charlebois S, Chicoine M, Schiettekatte F Journal of Vacuum Science & Technology A, 24(3), 774, 2006 |
| 6 |
Organometallic vapor phase epitaxy of GaAs1-N-x(x) alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation Beaudry JN, Masut RA, Desjardins P, Wei R, Chicoine M, Bentoumi G, Leonelli R, Schiettekatte F, Guillon S Journal of Vacuum Science & Technology A, 22(3), 771, 2004 |
| 7 |
Characterization GaAs1-xNx epitaxial layers by ion beam analysis Wei P, Chicoine M, Gujrathi S, Schiettekatte F, Beaudry JN, Masut RA, Desjardins P Journal of Vacuum Science & Technology A, 22(3), 908, 2004 |
| 8 |
Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001) Guillon S, Yip RYF, Desjardins P, Chicoine M, Bougrioua Z, Beaudoin M, Ait-Ouali A, Masut RA Journal of Vacuum Science & Technology A, 16(2), 781, 1998 |