| 1 |
Improved Electrical Performance and Thermal Stability of HfO2/Al2O3 Bilayer over HfO2 Gate Dielectric AlGaN/GaN MIS-HFETs
Tian F, Chor EF
Journal of the Electrochemical Society, 157(5), H557, 2010 |
| 2 |
Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition
Tian F, Chor EF
Thin Solid Films, 518(24), E121, 2010 |
| 3 |
Achieving Sub-0.1 eV Hole Schottky Barrier Height for NiSiGe on SiGe by Aluminum Segregation
Sinha M, Lee RTP, Lohani A, Mhaisalkar S, Chor EF, Yeo YC
Journal of the Electrochemical Society, 156(4), H233, 2009 |
| 4 |
Ohmic Contact Properties and Annealing Effect for Au/Ni on p-Type P-Doped ZnO
Hu GX, Gong H, Chor EF
Journal of the Electrochemical Society, 156(9), H740, 2009 |
| 5 |
Epitaxial growth of Sc2O3 films on GaN (0001) by pulsed laser deposition
Liu C, Chor EF, Tan LS, Du A
Journal of Vacuum Science & Technology B, 25(3), 754, 2007 |
| 6 |
Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation
Liu C, Chor EF, Tan LS
Thin Solid Films, 515(10), 4369, 2007 |
| 7 |
Effects of chemical and plasma surface treatments on the O-2-annealed Ni/Au contact to p-Gan
Lim J, Chor EF, Tan LS
Thin Solid Films, 515(10), 4471, 2007 |
| 8 |
AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
Wang HT, Tan LS, Chor EF
Thin Solid Films, 515(10), 4476, 2007 |
| 9 |
Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon
Tan CF, Chor EF, Lee H, Liu J, Quek E, Chan L
Thin Solid Films, 504(1-2), 132, 2006 |
| 10 |
Study of activation of beryllium implantation in gallium nitride
Wang HT, Tan LS, Chor EF
Journal of Crystal Growth, 268(3-4), 489, 2004 |
