검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Simulation of p-i-n heterojunctions built on strain-compensated Si/Si(0.40)Ge(0.60)/Si multiple quantum wells for photodetection near 1.55 mu m Sfina N, Lazzari JL, Cuminal Y, Christol P, Said M Thin Solid Films, 517(1), 388, 2008 |
| 2 |
Interface analysis of InAs/GaSb superlattice grown by MBE Satpati B, Rodriguez JB, Trampert A, Tournie E, Joullie A, Christol P Journal of Crystal Growth, 301, 889, 2007 |
| 3 |
MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection Rodriguez JB, Christol P, Cerutti L, Chevrier F, Joullie A Journal of Crystal Growth, 274(1-2), 6, 2005 |
| 4 |
MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers Wilk A, Genty F, Fraisse B, Boissier G, Grech P, El Gazouli M, Christol P, Oswald J, Simecek T, Hulicius E, Joullie A Journal of Crystal Growth, 223(3), 341, 2001 |
| 5 |
MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m Wilk A, Fraisse B, Christol P, Boissier G, Grech P, El Gazouli M, Rouillard Y, Baranov AN, Joullie A Journal of Crystal Growth, 227, 586, 2001 |