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| No. | Article |
|---|---|
| 1 |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-kappa dielectrics on Ge without interfacial layers Chu LK, Chu RL, Lin TD, Lee WC, Lin CA, Huang ML, Lee YJ, Kwo J, Hong M Solid-State Electronics, 54(9), 965, 2010 |