| 1 |
Facile Synthesis of Boron-doped Graphene Nanosheets with Hierarchical Microstructure at Atmosphere Pressure for Metal-free Electrochemical Detection of Hydrogen Peroxide
Yeh MH, Li YS, Chen GL, Lin LY, Li TJ, Chuang HM, Hsieh CY, Lo SC, Chiang WH, Hoa KC
Electrochimica Acta, 172, 52, 2015 |
| 2 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor
Lai H, Fu SI, Tsai YY, Hung CW, Yen CH, Chuang HM, Liu WC
Journal of the Electrochemical Society, 153(7), G632, 2006 |
| 3 |
Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
Chuang HM, Cheng SY, Chen CY, Liao XD, Lai PH, Kao CI, Liu WC
Journal of Vacuum Science & Technology B, 22(2), 832, 2004 |
| 4 |
Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs
Cheng SY, Chen CY, Chen JY, Chuang HM, Yen CH, Liu WC
Journal of Vacuum Science & Technology B, 22(4), 1699, 2004 |
| 5 |
Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures
Chen CY, Chiou WH, Yen CH, Chuang HM, Chen JY, Cheng CC, Liu WC
Journal of Vacuum Science & Technology B, 21(1), 82, 2003 |
| 6 |
Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
Tsai YY, Lin KW, Chen HI, Lu CT, Chuang HM, Chen CY, Liu WC
Journal of Vacuum Science & Technology B, 21(6), 2471, 2003 |
| 7 |
On the high-performance n(+)-GaAs/p(+)-InGaP/n-GaAs high-barrier gate camel-like HFETs
Wang CK, Yu KH, Chiou WH, Chen CY, Chuang HM, Liu WC
Solid-State Electronics, 47(1), 19, 2003 |
| 8 |
A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)
Chen CY, Wang WC, Chiou WH, Wang CK, Chuang HM, Cheng SY, Liu WC
Solid-State Electronics, 46(9), 1289, 2002 |
