화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 A 1.8 V 128; Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier
Chun KC, Sim JY, Yoon H, Lee HS, Hong SP, Lee KC, Yoo JH, Seo DI
Current Applied Physics, 4(1), 25, 2004
2 Comparative-Study of Tantalum and Tantalum Nitrides (Ta2N and Tan) as a Diffusion Barrier for Cu Metallization
Min KH, Chun KC, Kim KB
Journal of Vacuum Science & Technology B, 14(5), 3263, 1996