검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Cico K, Gregusova D, Kuzmik J, Jurkovic M, Alexewicz A, Poisson MAD, Pogany D, Strasser G, Delage S, Frohlich K Solid-State Electronics, 67(1), 74, 2012 |
| 2 |
InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases Cico K, Kuzmik J, Liday J, Husekova K, Pozzovivo G, Carlin JF, Grandjean N, Pogany D, Vogrincic P, Frohlich K Journal of Vacuum Science & Technology B, 27(1), 218, 2009 |
| 3 |
Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition Frohlich K, Luptak R, Husekova K, Cico K, Tapajna M, Weber U, Baumann PK, Lindner J, Espinos JP Journal of the Electrochemical Society, 153(8), F176, 2006 |