검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
ALD deposited Al(2)O3 films on 6H-SiC(0001) after annealing in hydrogen atmosphere Gao KY, Seyller B, Emtsev K, Ley L, Ciobanu F, Pensl G Materials Science Forum, 483, 559, 2005 |
| 2 |
SiC/SiO2 interface states: Properties and models Afanas'ev VV, Ciobanu F, Dimitrijev S, Pensl G, Stesmans A Materials Science Forum, 483, 563, 2005 |
| 3 |
Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation Ciobanu F, Pensl G, Afanas'ev VV, Schoner A Materials Science Forum, 483, 693, 2005 |
| 4 |
Electronic properties of SiON/HfO2 insulating stacks on 4H-SiC (0001) Afanas'ev VV, Campbell SA, Cheong KY, Ciobanu F, Dimitrijev S, Pensl G, Stesmans A, Zhong L Materials Science Forum, 457-460, 1361, 2004 |
| 5 |
Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition Seyller T, Gao K, Ley L, Ciobanu F, Pensl G, Tadich A, Riley JD, Leckey RCG Materials Science Forum, 457-460, 1369, 2004 |
| 6 |
Electrical and optical characterization of SiC Pensl G, Schmid F, Ciobanu F, Laube M, Reshanov SA, Schulze N, Semmelroth K, Nagasawa H, Schoner A, Wagner G Materials Science Forum, 433-4, 365, 2002 |
| 7 |
Traps at the interface of 3C-SiC/SiO2-MOS-structures Ciobanu F, Pensl G, Nagasawa H, Schoner A, Dimitrijev S, Cheong KY, Afanas'ev VV, Wagner G Materials Science Forum, 433-4, 551, 2002 |
| 8 |
Proton trapping in SiO2 layers thermally grown on Si and SiC Afanas'ev VV, Ciobanu F, Pensl G, Stesmans A Solid-State Electronics, 46(11), 1815, 2002 |