검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates Schulze F, Kisel O, Dadgar A, Krtschil A, Blasing J, Kunze M, Daumiller I, Hempel T, Diez A, Clos R, Christen J, Krost A Journal of Crystal Growth, 299(2), 399, 2007 |
| 2 |
MOVPE growth of GaN on Si - Substrates and strain Dadgar A, Veit P, Schulze F, Blasing J, Krtschil A, Witte H, Diez A, Hempel T, Christen J, Clos R, Krost A Thin Solid Films, 515(10), 4356, 2007 |
| 3 |
In situ monitoring of the stress evolution in growing group-III-nitride layers Krost A, Dadgar A, Schulze F, Blasing J, Strassburger G, Clos R, Diez A, Veit P, Hempel T, Christen J Journal of Crystal Growth, 275(1-2), 209, 2005 |
| 4 |
Heteroepitaxy of GaN on silicon: In situ measurements Krost A, Dadgar A, Schulze F, Clos R, Haberland K, Zettler T Materials Science Forum, 483, 1051, 2005 |
| 5 |
In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature Dadgar A, Schulze F, Zettler T, Haberland K, Clos R, Strassburger G, Blasing J, Diez A, Krost A Journal of Crystal Growth, 272(1-4), 72, 2004 |