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| No. | Article |
|---|---|
| 1 |
Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction Zhu SY, Qu XP, Van Meirhaeghe RL, Detavernier C, Ru GP, Cardon F, Li BZ Solid-State Electronics, 44(12), 2217, 2000 |