검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Surface state of GaN after rapid-thermal-annealing using AlN cap-layer El-Zammar G, Khalfaoui W, Oheix T, Yvon A, Collard E, Cayrel F, Alquier D Applied Surface Science, 355, 1044, 2015 |
| 2 |
Development of 600 V/8 A SiC Schottky diodes with epitaxial edge termination Templier F, Ferret P, Di Cioccio L, Collard E, Lhorte A, Billon T Materials Science Forum, 389-3, 1161, 2002 |