화학공학소재연구정보센터
검색결과 : 54건
No. Article
1 Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits
Matsuura K, Tanimoto Y, Saito A, Miyaoku Y, Mizoguchi T, Miura-Mattausch M, Mattausch HJ
Solid-State Electronics, 153, 59, 2019
2 Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions
Bae MS, Yun I
Solid-State Electronics, 156, 48, 2019
3 Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range
Pavanello MA, Cerdeira A, Doria RT, Ribeiro TA, Avila-Herrera F, Estrada M
Solid-State Electronics, 159, 116, 2019
4 Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation
Hain F, Graef M, Iniguez B, Kloes A
Solid-State Electronics, 133, 17, 2017
5 A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
Lime F, Avila-Herrera F, Cerdeira A, Iniguez B
Solid-State Electronics, 131, 24, 2017
6 A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime
Yu F, Ma XY, Deng WL, Liou JJ, Huang JK
Solid-State Electronics, 137, 38, 2017
7 A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
Hosenfeld F, Horst F, Iniguez B, Lime F, Kloes A
Solid-State Electronics, 137, 70, 2017
8 Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition
Dwivedi ADD, Chakravorty A, D'Esposito R, Sahoo AK, Fregonese S, Zimmer T
Solid-State Electronics, 115, 1, 2016
9 Charge-based compact analytical model for triple-gate junctionless nanowire transistors
Avila-Herrera F, Paz BC, Cerdeira A, Estrada M, Pavanello MA
Solid-State Electronics, 122, 23, 2016
10 Characterization of nanotransistors in a semiempirical model
Wulf U, Kucera J, Richter H, Wiatr M, Hontschel J
Thin Solid Films, 613, 6, 2016