1 |
Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits Matsuura K, Tanimoto Y, Saito A, Miyaoku Y, Mizoguchi T, Miura-Mattausch M, Mattausch HJ Solid-State Electronics, 153, 59, 2019 |
2 |
Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions Bae MS, Yun I Solid-State Electronics, 156, 48, 2019 |
3 |
Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range Pavanello MA, Cerdeira A, Doria RT, Ribeiro TA, Avila-Herrera F, Estrada M Solid-State Electronics, 159, 116, 2019 |
4 |
Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation Hain F, Graef M, Iniguez B, Kloes A Solid-State Electronics, 133, 17, 2017 |
5 |
A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs Lime F, Avila-Herrera F, Cerdeira A, Iniguez B Solid-State Electronics, 131, 24, 2017 |
6 |
A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime Yu F, Ma XY, Deng WL, Liou JJ, Huang JK Solid-State Electronics, 137, 38, 2017 |
7 |
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations Hosenfeld F, Horst F, Iniguez B, Lime F, Kloes A Solid-State Electronics, 137, 70, 2017 |
8 |
Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition Dwivedi ADD, Chakravorty A, D'Esposito R, Sahoo AK, Fregonese S, Zimmer T Solid-State Electronics, 115, 1, 2016 |
9 |
Charge-based compact analytical model for triple-gate junctionless nanowire transistors Avila-Herrera F, Paz BC, Cerdeira A, Estrada M, Pavanello MA Solid-State Electronics, 122, 23, 2016 |
10 |
Characterization of nanotransistors in a semiempirical model Wulf U, Kucera J, Richter H, Wiatr M, Hontschel J Thin Solid Films, 613, 6, 2016 |