화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells
Nicosia G, Goda A, Spinelli AS, Compagnoni CM
Solid-State Electronics, 151, 18, 2019
2 Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories
Paolucci GM, Bertuccio M, Compagnoni CM, Beltrami S, Spinelli AS, Lacaita AL, Visconti A
Solid-State Electronics, 113, 138, 2015
3 Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices
Maconi A, Arreghini A, Compagnoni CM, Van den Bosch G, Spinelli AS, Van Houdt J, Lacaita AL
Solid-State Electronics, 74, 64, 2012
4 Comprehensive numerical simulation of threshold-voltage transients in nitride memories
Mauri A, Amoroso SM, Compagnoni CM, Maconi A, Spinelli AS
Solid-State Electronics, 56(1), 23, 2011
5 Study of nanocrystal memory reliability by CAST structures
Compagnoni CM, Ielmini D, Spinelli AS, Lacaita AL, Gerardi C
Solid-State Electronics, 48(9), 1497, 2004