| 1 |
PdCu alloy nanoparticles supported on CeO2 nanorods: Enhanced electrocatalytic activity by synergy of compressive strain, PdO and oxygen vacancy
Guo ZW, Kang XW, Zheng XS, Huang J, Chen SW
Journal of Catalysis, 374, 101, 2019 |
| 2 |
Effect of atomic composition on the compressive strain and electrocatalytic activity of PtCoFe/sulfonated graphene
Lohrasbi E, Javanbakht M, Mozaffari SA
Applied Surface Science, 407, 236, 2017 |
| 3 |
A comparative study of the mechanical properties of multilayer MoS2 and graphene/MoS2 heterostructure: effects of temperature, number of layers and stacking order
Ghobadi N
Current Applied Physics, 17(11), 1483, 2017 |
| 4 |
Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations
Glowacki E, Le Royer C, Morand Y, Pedini JM, Denneulin T, Cooper D, Barnes JP, Nguyen P, Rouchon D, Hartmann JM, Gourhant O, Baylac E, Campidelli Y, Barge D, Bonnin O, Schwarzenbach W
Solid-State Electronics, 97, 82, 2014 |
| 5 |
The formation of interfacial wrinkles at the metal contacts on organic thin films
Fang JJ, Tsai HW, Ni IC, Tzeng SD, Chen MH
Thin Solid Films, 556, 294, 2014 |
| 6 |
Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays
Kim B, Kim SW, Jang H, Kim JH, Koo S, Kim DH, Min BG, Ko DH
Thin Solid Films, 557, 55, 2014 |
| 7 |
Gas-diffusion layer's structural anisotropy induced localized instability of nafion membrane in polymer electrolyte fuel cell
Poornesh KK, Sohn YJ, Park GG, Yang TH
International Journal of Hydrogen Energy, 37(20), 15339, 2012 |
| 8 |
Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors
Schmidt M, Minamisawa RA, Richter S, Luptak R, Hartmann JM, Buca D, Zhao QT, Mantl S
Solid-State Electronics, 71, 42, 2012 |
| 9 |
Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique
Yang HG, Wang D, Nakashima H
Thin Solid Films, 520(8), 3283, 2012 |
| 10 |
First-principles study on the formation of a vacancy in Ge under biaxial compressive strain
Choi JH, Na KD, Lee SC, Hwang CS
Thin Solid Films, 518(22), 6373, 2010 |
